Defect redistribution in postirradiation rapid-thermal-annealed InN

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.82.153202· OSTI ID:21421458

Reurings, Floris; Rauch, Christian; Tuomisto, Filip ^[1]; Jones, Rebecca E; Yu, Kin M; Walukiewicz, Wladek ^[2]; Schaff, William J ^[3]

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1. Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
3. Department of Electrical and Computer Engineering, Cornell University, 425 Philips Hall, Ithaca, New York 14853 (United States)

We have applied positron annihilation to study point defects in 2 MeV {sup 4}He{sup +}-irradiated and subsequently rapid-thermal-annealed (RTA) InN grown by molecular-beam epitaxy. The irradiation fluences ranged from 5x10{sup 14} to 2x10{sup 16} cm{sup -2}. The irradiation primarily produces donor defects but the subjects of this work are the acceptor-type defects produced in lower concentrations: V{sub In}, in addition to negative-ion-type defects. The heat treatment results in a redistribution of the irradiation-induced point defects. The In vacancies near the film-substrate interface appear restructured after the RTA process, possibly influenced by growth defects near the interface, while deeper in the InN layer, the defects produced in the irradiation are partially removed in the annealing. This could be responsible for the improved transport properties of the annealed films.

• OSTI ID: 21421458
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 82, Issue 15; Other Information: DOI: 10.1103/PhysRevB.82.153202; (c) 2010 The American Physical Society; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANIONS
ANNEALING
ANNIHILATION
CRYSTAL DEFECTS
FILMS
HELIUM 4 BEAMS
HELIUM IONS
INDIUM NITRIDES
INTERFACES
IRRADIATION
LAYERS
MEV RANGE 01-10
MOLECULAR BEAM EPITAXY
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
POSITRONS
SUBSTRATES
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BEAMS
CHARGED PARTICLES
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ENERGY RANGE
EPITAXY
FERMIONS
HEAT TREATMENTS
INDIUM COMPOUNDS
INTERACTIONS
ION BEAMS
IONS
LEPTONS
MATTER
MEV RANGE
NITRIDES
NITROGEN COMPOUNDS
PARTICLE INTERACTIONS
PNICTIDES
RADIATION EFFECTS