High electron mobility InN

Journal Article · Mon Apr 16 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2722693· OSTI ID:20960221

Jones, R E; Li, S X; Haller, E E; Yu, K M; Ager, III, J W; Liliental-Weber, Z; Walukiewicz, W; Lu, H; Schaff, W J ^[1]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 and Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)

Irradiation of InN films with 2 MeV He{sup +} ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility.

• OSTI ID: 20960221
• Journal Information: Applied Physics Letters, Vol. 90, Issue 16; Other Information: DOI: 10.1063/1.2722693; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
ELECTRON DENSITY
ELECTRON MOBILITY
HELIUM IONS
INDIUM NITRIDES
ION BEAMS
IRRADIATION
MEV RANGE 01-10
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
THIN FILMS