Cathodoluminescence of GaN implanted with Sm and Ho
We report the first observation of visible cathodoluminescence of the rare earth (RE) elements Sm, Ho implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100 degrees C in N2, at atmospheric pressure to recover implantation damages and activate the RE ions. The sharp characteristic emission lines corresponding to Sm{sup 3+} and Ho{sup 3+} intra-4f{sup n}-shell transitions are resolved in the spectral range from 400 to 1000 nm, and observed over the temperature range of 11-411 K. The cathodoluminescence emission is only weakly temperature dependent. The results indicate that RE doped GaN epilayers are suitable as a material for visible optoelectronic devices.
- Research Organization:
- COLLABORATION - OhioU.
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 925405
- Report Number(s):
- LBNL--45402
- Journal Information:
- Solid State Communications, Journal Name: Solid State Communications Journal Issue: 5 Vol. 110; ISSN 0038-1098; ISSN SSCOA4
- Country of Publication:
- United States
- Language:
- English
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