Photoluminescence and cathodoluminescence of GaN doped with Tb
- School of Electrical Engineering and Computer Science, and Condensed Matter and Surface Sciences Program, Ohio University, Athens, Ohio 45701 (United States)
- Lawrence Berkeley Laboratory, University of California Berkeley, Berkeley, California 94720 (United States)
We report the observation of the visible cathodoluminescence and photoluminescence of Tb{sup 3+} ions implanted in GaN. The sharp characteristic emission lines corresponding to Tb{sup 3+} intra-4f{sup 8}-shell transitions are resolved in the spectral range from 350 to 900 nm, and observed over the temperature range of 7-330 K. The luminescence shows transitions which originate in the {sup 5}D{sub 3} and {sup 5}D{sub 4} levels and terminated in the {sup 7}F manifolds. The cathodoluminescence emission is only weakly temperature dependent. The results indicate that Tb-doped GaN epilayers may be suitable as a material for visible optoelectronic devices. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20215273
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 76; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoluminescence and cathodoluminescence of GaN doped with Pr
Photoluminescence and cathodoluminescence of GaN doped with Pr