Visible cathodoluminescence of GaN doped with Dy, Er, and Tm
- School of Electrical Engineering and Computer Science, and Condensed Matter and Surface Sciences Program, Ohio University, Stocker Center, Athens, Ohio 45701 (United States)
- Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, California 94720 (United States)
We reported the observation of visible cathodoluminescence of rare-earth Dy, Er, and Tm implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100{degree}C in N{sub 2} or NH{sub 3}, at atmospheric pressure to recover implantation damages and activated the rare-earth ions. The sharp characteristic emission lines corresponding to Dy{sup 3+}, Er{sup 3+}, and Tm{sup 3+} intra-4f{sup n}-shell transitions are resolved in the spectral range from 380 to 1000 nm, and observed over the temperature range of 8.5{endash}411 K. The cathodoluminescence emission is only weakly temperature dependent. The results indicate that rare-earth-doped GaN epilayers are suitable as a material for visible optoelectronic devices. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 324899
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 74; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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