Low-energy ion assisted deposition of epitaxial gallium nitridefilms
Epitaxial gallium nitride thin films were grown on c-planeand r-plane sapphire by low-energy ion assisted deposition in high vacuumusing a constricted glow discharge plasma source for the supply ofnitrogen. Instead of preparing a conventional low-temperature bufferlayer, a single-temperature process with initial growth rate ramp wasperformed. The crystallographic structure and texture, defectdistribution, morphology and topography of the grown films wereinvestigated with X-ray diffraction techniques, channeling-RBS, TEM andAFM, respectively. The ion assisted growth procedure results inwell-oriented, epitaxial, single crystalline, wurtzitic GaN films withlow defect densities. The film surfaces are generally smooth, but showeither holes or clusters indicating unbalanced gallium and nitrogenfluxes during growth.
- Research Organization:
- COLLABORATION - U.Augsburg/Germany
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 925404
- Report Number(s):
- LBNL--45399
- Journal Information:
- Nuclear Instruments and methods in Physics Research SectionB, Journal Name: Nuclear Instruments and methods in Physics Research SectionB Journal Issue: 1 Vol. 148
- Country of Publication:
- United States
- Language:
- English
Similar Records
Epitaxial growth of GaN films produced by ECR-assisted MBE
Low temperature epitaxial growth of AlN and GaN thin films by the method of ion beam assisted deposition