Germanium hut nanostressors on free-standing ultrathin SOI.
Conference
·
OSTI ID:925288
Heteroepitaxial growth of SiGe on thin Si membranes leads to the sharing of the epitaxial strain between the Si template layer and the deposited thin film. At high Ge concentrations, at which Ge forms dislocation-free hut nanostructures, there can be significant bending underneath self-assembled Ge huts. We have fabricated undercut mesas to approximate a freestanding Si membrane and produced Ge hut structures using molecular beam epitaxy. Using synchrotron x-ray microdiffraction to probe the strain and bending of the template layer directly, we compare strain sharing in conventional blanket film structures with the strain induced by Ge hut structures.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; NSF
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 925288
- Report Number(s):
- ANL/XFD/CP-117260
- Country of Publication:
- United States
- Language:
- ENGLISH
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