Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

{open_quotes}Inverted hut{close_quotes} structure of Si{endash}Ge nanocrystals studied by extended x-ray absorption fine structure method

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.1377311· OSTI ID:40203193
Local structure around Ge in Si/Ge superlattices containing the {open_quotes}inverted hut{close_quotes} nanocrystals has been investigated by using the extended x-ray absorption fine structure (EXAFS) technique. In contrast to the usual nanometer-sized Ge {open_quotes}hut clusters{close_quotes} commonly grown on top of Si layers using the conventional Stranski{endash}Krastanow self-organized growth mode, SiGe-alloy nanocrystals can be formed beneath the Ge wetting layer and grown into the Si layer in Si/Ge superlattices prepared in a low-temperature molecular beam epitaxy growth mode, and exhibit inverted hut nanocrystal structures regularly spaced along the Si/Ge interface. The EXAFS results obtained with varying Ge wetting layer thickness provide a direct evidence that intermixing of Ge and Si atoms takes place in a zone of about 1{endash}3 monolayers on each side of the Si/Ge interface. The intermixing of constituent atoms allows a mechanism other than the usual formation of misfit dislocations to release the strain energy resulted from lattice mismatch between Si and Ge at the interface. {copyright} 2001 American Institute of Physics.
Sponsoring Organization:
(US)
OSTI ID:
40203193
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 78; ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English

Similar Records

Germanium hut nanostressors on free-standing ultrathin SOI.
Conference · Fri Dec 31 23:00:00 EST 2004 · OSTI ID:925288

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
Journal Article · Sat Sep 14 00:00:00 EDT 2013 · Journal of Applied Physics · OSTI ID:22218066

Thermal conductivity of Si{endash}Ge superlattices
Journal Article · Sun Jun 01 00:00:00 EDT 1997 · Applied Physics Letters · OSTI ID:508920