{open_quotes}Inverted hut{close_quotes} structure of Si{endash}Ge nanocrystals studied by extended x-ray absorption fine structure method
Local structure around Ge in Si/Ge superlattices containing the {open_quotes}inverted hut{close_quotes} nanocrystals has been investigated by using the extended x-ray absorption fine structure (EXAFS) technique. In contrast to the usual nanometer-sized Ge {open_quotes}hut clusters{close_quotes} commonly grown on top of Si layers using the conventional Stranski{endash}Krastanow self-organized growth mode, SiGe-alloy nanocrystals can be formed beneath the Ge wetting layer and grown into the Si layer in Si/Ge superlattices prepared in a low-temperature molecular beam epitaxy growth mode, and exhibit inverted hut nanocrystal structures regularly spaced along the Si/Ge interface. The EXAFS results obtained with varying Ge wetting layer thickness provide a direct evidence that intermixing of Ge and Si atoms takes place in a zone of about 1{endash}3 monolayers on each side of the Si/Ge interface. The intermixing of constituent atoms allows a mechanism other than the usual formation of misfit dislocations to release the strain energy resulted from lattice mismatch between Si and Ge at the interface. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203193
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 23; Other Information: DOI: 10.1063/1.1377311; Othernumber: APPLAB000078000023003684000001; 003123APL; PBD: 4 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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