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Effect of process variations and ambient temperature on electron mobility at the SiO[2]/4H-SiC interface.

Journal Article · · Proposed for publication in IEEE Transactions on Electron Devices.
OSTI ID:923573
 [1];  [2]; ;  [2];  [3];  [3];  [4]
  1. Vanderbilt University, Nashville, TN
  2. Auburn University, Auburn, AL
  3. Purdue University, West Lafayette, IN
  4. Fuji Electric Co., Tokyo, Japan
+ Show Author Affiliations

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
923573
Report Number(s):
SAND2003-1648J
Journal Information:
Proposed for publication in IEEE Transactions on Electron Devices., Journal Name: Proposed for publication in IEEE Transactions on Electron Devices.
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
AMBIENT TEMPERATURE
ELECTRON MOBILITY
FABRICATION
INTERFACES
PROCESS CONTROL
SILICON CARBIDES
SILICON OXIDES