LIGHT INDUCED TELLURIUM ENRICHMENT ON CDZNTE CRYSTALSURFACES DETECTED BY RAMAN SPECTROSCOPY
Journal Article
·
· Journal of Electronic Materials
OSTI ID:920377
Synthetic CdZnTe or 'CZT' crystals can be grown under controlled conditions to produce high quality crystals to be used as room temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro Raman spectroscopy. The growth of Te rich areas on the surface was induced by low powered lasers. The growth was observed versus time with low power Raman scattering and was observed immediately under higher power conditions. The detector response was also measured after induced Te enrichment.
- Research Organization:
- SRS
- Sponsoring Organization:
- DOE
- DOE Contract Number:
- AC09-96SR18500
- OSTI ID:
- 920377
- Report Number(s):
- WSRC-STI-2007-00614
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials; ISSN JECMA5; ISSN 0361-5235
- Publisher:
- pubinfo
- Country of Publication:
- United States
- Language:
- English
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