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High-Temperature Annealing of CdZnTe Detectors

Journal Article · · IEEE Transactions on Nuclear Science
 [1];  [1];  [1];  [2];  [3];  [4];  [1];  [5]
  1. Korea Univ., Sejong (South Korea)
  2. Kyushu Univ., Fukuoka (Japan)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Savannah River National Lab., Aiken, SC (United States)
  5. Korea Univ., Seoul (South Korea)
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The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle of bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
Grant/Contract Number:
SC0012704
OSTI ID:
1435728
Report Number(s):
BNL--203579-2018-JAAM
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 12 Vol. 64; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

Figures / Tables (8)

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Related Subjects

36 MATERIALS SCIENCE
CZT detectors
CdZnTe (CZT)