High-Temperature Annealing of CdZnTe Detectors
- Korea Univ., Sejong (South Korea)
- Kyushu Univ., Fukuoka (Japan)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Savannah River National Lab., Aiken, SC (United States)
- Korea Univ., Seoul (South Korea)
The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle of bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1435728
- Report Number(s):
- BNL-203579-2018-JAAM; TRN: US1900093
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 64, Issue 12; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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