Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

Journal Article · Mon Dec 08 04:00:00 EST 2008 · J. Electro. Mater.

DOI:https://doi.org/10.1007/s11664-008-0448-x· OSTI ID:1006879

Hawkins, Samantha A; Villa-Aleman, Eliel; Duff, Martine C; Hunter, Doug B; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Black, David R ^[1]

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1. SRNL

CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.

• Research Organization: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
• Sponsoring Organization: USDOE
• OSTI ID: 1006879
• Journal Information: J. Electro. Mater., Journal Name: J. Electro. Mater. Journal Issue: (9) ; 09, 2008 Vol. 37; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMBIENT TEMPERATURE
CADMIUM TELLURIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
DEFECTS
ENRICHMENT
GROWTH
LASERS
PERFORMANCE
RADIATION DETECTORS
RAMAN SPECTROSCOPY
SCATTERING
SEMICONDUCTOR DETECTORS
SPECTROSCOPY
SURFACES
TELLURIUM
ZINC TELLURIDES