Band Offsets Between Amorphous LaAlO3 And In0.53Ga0.47As

Journal Article · Tue Oct 23 04:00:00 EDT 2007 · Appl.Phys.Lett.91:113515,2007

DOI:https://doi.org/10.1063/1.2783264· OSTI ID:918524

Goel, N; Tsai, W; Garner, C M; Sun, Y; Pianetta, P; Warusawithana, M; Schlom, D G; Wen, H; Gaspe, C; Keay, J C; Santos, M B; Goncharova, L V; Garfunkel, E; Gustafsson, T

The band offsets between an amorphous LaAlO{sub 3} dielectric prepared by molecular-beam deposition and a n-type In{sub 0.53}Ga{sub 0.47}As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAlO{sub 3}/InGaAs interface are 3.1{+-}0.1 and 2.35{+-}0.2 eV, respectively. The band gap of LaAlO{sub 3}, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2{+-}0.1 eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6 nm thick amorphous LaAlO{sub 3}.

• Research Organization: Stanford Linear Accelerator Center (SLAC)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 918524
• Report Number(s): SLAC-REPRINT-2007-213
• Journal Information: Appl.Phys.Lett.91:113515,2007, Journal Name: Appl.Phys.Lett.91:113515,2007 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
43 PARTICLE ACCELERATORS
DEPOSITION
DIELECTRIC MATERIALS
OXIDES
Other
OTHER
PHOTOEMISSION
RESOLUTION
SCATTERING
SPECTRA
SPECTROSCOPY
SYNCHROTRON RADIATION
VALENCE