Measurements of the Band Offsets Between Amorphous LaAlO3 and Silicon
The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from X-ray photoelectron spectroscopy (XPS) measurements. These films, which are free of interfacial SiO2, were made by molecular beam deposition (MBD). The band line-up is type I with measured band offsets of 1.86 0.1 eV for electrons and 3.23 0.1 eV for holes. The band offsets are independent of the doping concentration in the silicon substrate as well as the LaAlO3 film thickness. These amorphous LaAlO3 films have a bandgap of 6.2 0.1 eV.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US), Environmental Molecular Sciences Laboratory (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15006481
- Report Number(s):
- PNNL-SA-40144; 2465; 2640; KP1301030
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 84; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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