Measurement of the Band Offsets between Amorphous LaAlO₃ and Silicon

Journal Article · Mon Feb 02 04:00:00 EST 2004 · Applied Physics Letters, 84(5):726-728

DOI:https://doi.org/10.1063/1.1644055· OSTI ID:15011117

Edge, Lisa F; Schlom, Darrell G; Chambers, Scott A; Cicerrella, E; Freeouf, J L; Hollander, B; Schubert, J

The conduction and valence band offsets between amorphous LaAlO{sub 3} and silicon have been determined from X-ray photoelectron spectroscopy (XPS) measurements. These films, which are free of interfacial SiO{sub 2}, were made by molecular beam deposition (MBD). The band line-up is type I with measured band offsets of 1.86 {+-} 0.2 eV for electrons and 3.23 {+-} 0.1 eV for holes. The band offsets are independent of the doping concentration in the silicon substrate as well as the amorphous LaAlO{sub 3} film thickness. These amorphous LaAlO{sub 3} films have a bandgap of 6.2 {+-} 0.1 eV.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 15011117
• Report Number(s): PNNL-SA-43521; 2640; KC0201050
• Journal Information: Applied Physics Letters, 84(5):726-728, Journal Name: Applied Physics Letters, 84(5):726-728 Journal Issue: 5 Vol. 84; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
ENERGY GAP
Environmental Molecular Sciences Laboratory
LANTHANUM OXIDES
SILICON
VALENCE