Strain-Induced Single-Domain Growth of Epitaxial SrRuO3 Layers on SrTiO3: a High-Temperature X-Ray Diffraction Study

Journal Article · Wed Oct 10 00:00:00 EDT 2007 · Appl.Phys.Lett.91:071907,2007

DOI:https://doi.org/10.1063/1.2771087· OSTI ID:917730

Vailionis, A; Siemons, W; Koster, G

Temperature dependent structural phase transitions of SrRuO{sub 3} thin films epitaxially grown on SrTiO{sub 3}(001) single crystal substrates have been studied using high-resolution x-ray diffraction. In contrast to bulk SrRuO{sub 3}, coherently strained epitaxial layers do not display cubic symmetry up to {approx}730 deg. C and remain tetragonal. The cause of this behavior is believed to be the compressive strain in the SrRuO{sub 3} layer due to the lattice mismatch with SrTiO{sub 3} substrate due to lattice mismatch. The tetragonal symmetry during growth explains the single domain growth on miscut SrTiO{sub 3} substrates with step edges running along the [100] or [010] direction.

• Research Organization: Stanford Linear Accelerator Center (SLAC)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 917730
• Report Number(s): SLAC-REPRINT-2007-201
• Journal Information: Appl.Phys.Lett.91:071907,2007, Journal Name: Appl.Phys.Lett.91:071907,2007 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
EPITAXY
Other
OTHER
PHASE TRANSFORMATIONS
RUTHENIUM OXIDES
STRAINS
STRONTIUM OXIDES
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION