Strain-induced single-domain growth of epitaxial SrRuO{sub 3} layers on SrTiO{sub 3}: A high-temperature x-ray diffraction study

Journal Article · Mon Aug 13 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2771087· OSTI ID:21016097

Vailionis, Arturas; Siemons, Wolter; Koster, Gertjan ^[1]

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1. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 and X-ray Laboratory for Advanced Materials, Stanford Linear Accelerator Center, Menlo Park, California 94025 (United States)

Temperature dependent structural phase transitions of SrRuO{sub 3} thin films epitaxially grown on SrTiO{sub 3}(001) single crystal substrates have been studied using high-resolution x-ray diffraction. In contrast to bulk SrRuO{sub 3}, coherently strained epitaxial layers do not display cubic symmetry up to {approx}730 deg. C and remain tetragonal. The cause of this behavior is believed to be the compressive strain in the SrRuO{sub 3} layer due to the lattice mismatch with SrTiO{sub 3} substrate due to lattice mismatch. The tetragonal symmetry during growth explains the single domain growth on miscut SrTiO{sub 3} substrates with step edges running along the [100] or [010] direction.

• OSTI ID: 21016097
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
CRYSTAL GROWTH
ENERGY BEAM DEPOSITION
LASER RADIATION
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHASE TRANSFORMATIONS
PULSED IRRADIATION
RESIDUAL STRESSES
RUBIDIUM OXIDES
STRONTIUM TITANATES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY DIFFRACTION