THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.
Conference
·
OSTI ID:909960
In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called ''dead layer'' and the influence of charged oxide layers are of paramount importance. To this purpose, experimental observations near the edge of a TEM sample can be useful. In these conditions, however, phase computations required to interpret the experimental results are very challenging as the problem is intrinsically three-dimensional. In order to cope with this problem, a mixed analytical-numerical approach is presented and discussed.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 909960
- Report Number(s):
- BNL-77930-2007-CP; R&D Project: 05247; KC0201010; TRN: US200723%%77
- Resource Relation:
- Conference: PROCEEDINGS OF THE MICROSCOPY OF SEMICONDUCTING MATERIALS; UNIVERSITY OF CAMBRIDGE; 20070402 through 20070405
- Country of Publication:
- United States
- Language:
- English
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