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Title: THREE-DIMENSIONAL FIELD MODELS FOR REVERSE BIASED P-N JUNCTIONS.

Conference ·
OSTI ID:909960

In order to obtain reliable quantitative information on the electrostatic field associated with reverse-biased p-n junctions and on the distribution of dopants, the physics of the so-called ''dead layer'' and the influence of charged oxide layers are of paramount importance. To this purpose, experimental observations near the edge of a TEM sample can be useful. In these conditions, however, phase computations required to interpret the experimental results are very challenging as the problem is intrinsically three-dimensional. In order to cope with this problem, a mixed analytical-numerical approach is presented and discussed.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
Doe - Office Of Science
DOE Contract Number:
DE-AC02-98CH10886
OSTI ID:
909960
Report Number(s):
BNL-77930-2007-CP; R&D Project: 05247; KC0201010; TRN: US200723%%77
Resource Relation:
Conference: PROCEEDINGS OF THE MICROSCOPY OF SEMICONDUCTING MATERIALS; UNIVERSITY OF CAMBRIDGE; 20070402 through 20070405
Country of Publication:
United States
Language:
English