On the nature of electroluminescence at 1.5 {mu}m in the breakdown mode of reverse-biased Er-doped silicon p-n-junction structures grown by sublimation molecular beam epitaxy

Journal Article · Sat Jan 15 00:00:00 EST 2011 · Semiconductors

DOI:https://doi.org/10.1134/S106378261101012X· OSTI ID:22004890

Ezhevskii, A A; Marychev, M O; Filatov, D O; Shengurov, V G ^[1]

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1. Lobachevsky State University of Nizhni Novgorod, Physicotechnical Research Institute (Russian Federation)

Electroluminescence features in the wavelength range of 0.9-1.65 {mu}m were experimentally studied in the breakdown mode of reverse biased Si/Si:Er/Si p-n-junction structures grown by sublimation molecular-beam epitaxy. Based on the results of this study, a new physical model is proposed, in which radiative transitions in the near-infrared region are excited by recombination of electrons arriving at corresponding energy levels in the Si:Er layer due to their tunneling from the valence band of the p{sup +}-layer in the electric field of the reverse biased p-n-junction. The model proposed is in qualitative agreement with main available experimental results.

• OSTI ID: 22004890
• Journal Information: Semiconductors, Vol. 45, Issue 1; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRIC FIELDS
ELECTROLUMINESCENCE
ENERGY LEVELS
LAYERS
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
RECOMBINATION
SILICON
SUBLIMATION
TUNNEL EFFECT