Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys
Patent
·
OSTI ID:909584
- Evergreen, CO
- Lakewood, CO
Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- 7,229,498
- Application Number:
- 10/532,540
- OSTI ID:
- 909584
- Country of Publication:
- United States
- Language:
- English
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
|
journal | March 2001 |
Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy
|
journal | March 1999 |
Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
|
journal | May 2000 |
Optical properties of InAs quantum dots in a Si matrix
|
journal | March 1999 |
Similar Records
Methods for improved growth of group III nitride semiconductor compounds
Methods for improved growth of group III nitride buffer layers
Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors
Patent
·
Tue Mar 17 00:00:00 EDT 2015
·
OSTI ID:909584
Methods for improved growth of group III nitride buffer layers
Patent
·
Tue Jul 15 00:00:00 EDT 2014
·
OSTI ID:909584
Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors
Technical Report
·
Wed Apr 18 00:00:00 EDT 2018
·
OSTI ID:909584