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Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

Patent ·
OSTI ID:909584
 [1];  [2]
  1. Evergreen, CO
  2. Lakewood, CO
+ Show Author Affiliations

Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

Research Organization:
Midwest Research Institute (Kansas City, MO)
Sponsoring Organization:
United States Department of Energy
DOE Contract Number:
AC36-99GO10337
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
7,229,498
Application Number:
10/532,540
OSTI ID:
909584
Country of Publication:
United States
Language:
English

References (4)

Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties journal March 2001
Optical properties of InAs quantum dots in a Si matrix journal March 1999
Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy journal March 1999
Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate journal May 2000

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36 MATERIALS SCIENCE