Resistivity analysis

Patent · Tue Jun 13 04:00:00 EDT 2006

OSTI ID:908393

Bruce, Michael R ^[1]; Bruce, Victoria J ^[1]; Ring, Rosalinda M ^[1]; Cole, Edward Jr I ^[2]; Hawkins, Charles F ^[2]; Tangyungong, Paiboon ^[2]

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1. Austin, TX
2. Albuquerque, NM

According to an example embodiment of the present invention a semiconductor die having a resistive electrical connection is analyzed. Heat is directed to the die as the die is undergoing a state-changing operation to cause a failure due to suspect circuitry. The die is monitored, and a circuit path that electrically changes in response to the heat is detected and used to detect that a particular portion therein of the circuit is resistive. In this manner, the detection and localization of a semiconductor die defect that includes a resistive portion of a circuit path is enhanced.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM
• Sponsoring Organization: United States Department of Energy
• DOE Contract Number: AC04-94AL85000
• Assignee: Advance Micro Devices, Inc. (Sunnyvale, CA)
• Patent Number(s): 7,062,399
• Application Number: 09/586,518
• OSTI ID: 908393
• Country of Publication: United States
• Language: English

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