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Title: Thermally-induced voltage alteration for analysis of microelectromechanical devices

Abstract

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing a microelectromechanical (MEM) device with or without on-board integrated circuitry. One embodiment of the TIVA apparatus uses constant-current biasing of the MEM device while scanning a focused laser beam over electrically-active members therein to produce localized heating which alters the power demand of the MEM device and thereby changes the voltage of the constant-current source. This changing voltage of the constant-current source can be measured and used in combination with the position of the focused and scanned laser beam to generate an image of any short-circuit defects in the MEM device (e.g. due to stiction or fabrication defects). In another embodiment of the TIVA apparatus, an image can be generated directly from a thermoelectric potential produced by localized laser heating at the location of any short-circuit defects in the MEM device, without any need for supplying power to the MEM device. The TIVA apparatus can be formed, in part, from a scanning optical microscope, and has applications for qualification testing or failure analysis of MEM devices.

Inventors:
 [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874530
Patent Number(s):
US 6407560
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermally-induced; voltage; alteration; analysis; microelectromechanical; devices; tiva; apparatus; method; disclosed; analyzing; device; on-board; integrated; circuitry; embodiment; constant-current; biasing; scanning; focused; laser; beam; electrically-active; produce; localized; heating; alters; power; demand; changes; source; changing; measured; combination; position; scanned; generate; image; short-circuit; defects; due; stiction; fabrication; generated; directly; thermoelectric; potential; produced; location; supplying; formed; optical; microscope; applications; qualification; testing; failure; laser beam; integrated circuit; electric potential; mechanical device; electromechanical devices; microelectromechanical device; /324/

Citation Formats

Walraven, Jeremy A, and Cole, Jr., Edward I. Thermally-induced voltage alteration for analysis of microelectromechanical devices. United States: N. p., 2002. Web.
Walraven, Jeremy A, & Cole, Jr., Edward I. Thermally-induced voltage alteration for analysis of microelectromechanical devices. United States.
Walraven, Jeremy A, and Cole, Jr., Edward I. 2002. "Thermally-induced voltage alteration for analysis of microelectromechanical devices". United States. https://www.osti.gov/servlets/purl/874530.
@article{osti_874530,
title = {Thermally-induced voltage alteration for analysis of microelectromechanical devices},
author = {Walraven, Jeremy A and Cole, Jr., Edward I.},
abstractNote = {A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing a microelectromechanical (MEM) device with or without on-board integrated circuitry. One embodiment of the TIVA apparatus uses constant-current biasing of the MEM device while scanning a focused laser beam over electrically-active members therein to produce localized heating which alters the power demand of the MEM device and thereby changes the voltage of the constant-current source. This changing voltage of the constant-current source can be measured and used in combination with the position of the focused and scanned laser beam to generate an image of any short-circuit defects in the MEM device (e.g. due to stiction or fabrication defects). In another embodiment of the TIVA apparatus, an image can be generated directly from a thermoelectric potential produced by localized laser heating at the location of any short-circuit defects in the MEM device, without any need for supplying power to the MEM device. The TIVA apparatus can be formed, in part, from a scanning optical microscope, and has applications for qualification testing or failure analysis of MEM devices.},
doi = {},
url = {https://www.osti.gov/biblio/874530}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Works referenced in this record:

Detection and characterization of failures and defects in LSI chips by optical beam induced resistance changes (OBIRCH)
book, January 1998


Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods
conference, October 1997


TIVA and SEI developments for enhanced front and backside interconnection failure analysis
journal, June 1999


New non-bias optical beam induced current (NB-OBIC) technique for evaluation of Al interconnects
conference, January 1995


Various Contrasts Identifiable From the Backside of a Chip by 1.3μm Laser Beam Scanning and Current Change Imaging
conference, November 1996


New capabilities of OBIRCH method for fault localization and defect detection
conference, January 1997