Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Highly Mismatched Alloys for Intermediate Band Solar Cells

Conference ·
OSTI ID:908162
It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.
Research Organization:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Organization:
USDOE Director. Office of Science. Office of High Energy andNuclear Science. Office of Basic Energy Sciences. Materials Sciences andEngineering Division
DOE Contract Number:
AC02-05CH11231
OSTI ID:
908162
Report Number(s):
LBNL--57339; BnR: 400403909
Country of Publication:
United States
Language:
English

Similar Records

Synthesis and optical properties of II-O-VI highly mismatched alloys
Journal Article · Mon Jan 19 23:00:00 EST 2004 · Journal of Applied Physics · OSTI ID:836378

Multiband GaNAsP Quaternary Alloys
Journal Article · Wed Dec 07 23:00:00 EST 2005 · Applied Physics Letters · OSTI ID:903038

Band anticrossing in highly mismatched group II-VI semiconductor alloys
Conference · Wed Oct 03 00:00:00 EDT 2001 · OSTI ID:803853