Band anticrossing in highly mismatched group II-VI semiconductor alloys

Conference · Wed Oct 03 04:00:00 EDT 2001

OSTI ID:803853

Yu, K M ^[1]; Wu, J; Walukiewicz, W; Beeman, J W; Ager, J W; Haller, E E; Miotkowski, I; Ramdas, A

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1. LBNL Library

We have successfully synthesized highly mismatched Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys by high dose implantation of O ions into Cd{sub 1-y}Mn{sub y}Te crystals. In crystals with y > 0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd{sub 0.38}Mn{sub 0.62}Te. The results are consistent with the band anticrossing model which predicts that a repulsive interaction between localized states of O located above the conduction band edge and the extended states of the conduction band causes the band gap reduction. A best fit of the measured band gap energies of the O ion synthesized Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys using the band anticrossing model for y < 0.55 suggests an activation efficiency of only {approx}5% for implanted O in Cd{sub 1-y}Mn{sub y}Te.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 803853
• Report Number(s): LBNL--51121; B& R KC0201030
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
CHEMISTRY
EFFICIENCY
PHYSICS
SEMICONDUCTOR MATERIALS