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Recent Results From a Si/CdTe Semiconductor Compton Telescope

Journal Article · · Nucl.Instrum.Meth.A568:375-381,2006
OSTI ID:898152
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We are developing a Compton telescope based on high resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed a prototype Compton telescope which consists of six layers of double-sided Si strip detectors and CdTe pixel detectors to demonstrate the basic performance of this new technology. By irradiating the detector with gamma-rays from radio isotope sources, we have succeeded in Compton reconstruction of images and spectra. The obtained angular resolution is 3.9{sup o} (FWHM) at 511 keV, and the energy resolution is 14 keV (FWHM) at the same energy. In addition to the conventional Compton reconstruction, i.e., drawing cones in the sky, we also demonstrated a full reconstruction by tracking Compton recoil electrons using the signals detected in successive Si layers. By irradiating {sup 137}Cs source, we successfully obtained an image and a spectrum of 662 keV line emission with this method. As a next step, development of larger double-sided Si strip detectors with a size of 4 cm x 4 cm is underway to improve the effective area of the Compton telescope. We are also developing a new low-noise analog ASIC to handle the increasing number of channels. Initial results from these two new technologies are presented in this paper as well.
Research Organization:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
898152
Report Number(s):
SLAC-PUB-12318
Journal Information:
Nucl.Instrum.Meth.A568:375-381,2006, Journal Name: Nucl.Instrum.Meth.A568:375-381,2006
Country of Publication:
United States
Language:
English

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Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ASTROPHYSICS
Astrophysics
ASTRO
CDTE SEMICONDUCTOR DETECTORS
COMPTON EFFECT
ENERGY RESOLUTION
GAMMA DETECTION
PERFORMANCE
SI SEMICONDUCTOR DETECTORS
TELESCOPES