Results of a Si/Cdte Compton Telescope

Conference · Fri Sep 23 04:00:00 EDT 2005

OSTI ID:878400

Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu; Fukazawa, Yasushi; Nomachi, Masaharu

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2{sup o}(FWHM).

• Research Organization: Stanford Linear Accelerator Center (SLAC)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 878400
• Report Number(s): SLAC-PUB-11492; astro-ph/0509486
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
Astrophysics
ASTRO
CDTE SEMICONDUCTOR DETECTORS
COMPTON EFFECT
KEV RANGE
PERFORMANCE
SI SEMICONDUCTOR DETECTORS
TELESCOPES