A Si/CdTe Semiconductor Compton Camera
- SLAC
We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six layered double-sided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC), Menlo Park, CA
- Sponsoring Organization:
- SC
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 839891
- Report Number(s):
- SLAC-PUB-11144
- Country of Publication:
- United States
- Language:
- English
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