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Title: Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

Abstract

In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
894278
Patent Number(s):
U.S. Patent No. 6,984,263 B2
Application Number:
TRN: US200701%%294
Assignee:
NREL
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; AVAILABILITY; CONTAINERS; CONVECTION; CRUCIBLES; CRYSTAL GROWTH; HEAT TRANSFER; MONOCRYSTALS; SHAPE; SHALLOW MELT APPARATUS; SEMICONTINUOUS CZOCHRALSKI CRYSTAL GROWTH; SEMICONDUCTOR MELT; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Wang, T., and Ciszek, T. F. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth. United States: N. p., 2006. Web.
Wang, T., & Ciszek, T. F. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth. United States.
Wang, T., and Ciszek, T. F. Tue . "Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth". United States.
@article{osti_894278,
title = {Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth},
author = {Wang, T. and Ciszek, T. F.},
abstractNote = {In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {1}
}