Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth
In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- Assignee:
- NREL
- Patent Number(s):
- U.S. Patent No. 6,984,263 B2
- Application Number:
- TRN: US200701%%294
- OSTI ID:
- 894278
- Country of Publication:
- United States
- Language:
- English
Similar Records
Continuous Czochralski growth: silicon sheet growth development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Annual progress report, 1 October 1977-30 September 1978
Advanced Czochralski silicon-growth technology for photovoltaic modules