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Title: Shallow melt apparatus for semicontinuous czochralski crystal growth

Abstract

In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175612
Patent Number(s):
6,984,263
Application Number:
10/494,482
Assignee:
Midwest Research Institute (Kansas City, MO) OSTI
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Wang, Tihu, and Ciszek, Theodore F. Shallow melt apparatus for semicontinuous czochralski crystal growth. United States: N. p., 2006. Web.
Wang, Tihu, & Ciszek, Theodore F. Shallow melt apparatus for semicontinuous czochralski crystal growth. United States.
Wang, Tihu, and Ciszek, Theodore F. Tue . "Shallow melt apparatus for semicontinuous czochralski crystal growth". United States. https://www.osti.gov/servlets/purl/1175612.
@article{osti_1175612,
title = {Shallow melt apparatus for semicontinuous czochralski crystal growth},
author = {Wang, Tihu and Ciszek, Theodore F.},
abstractNote = {In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {1}
}

Patent:

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