Continuous Czochralski growth: silicon sheet growth development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Annual progress report, 1 October 1977-30 September 1978

Technical Report · Sun Jan 01 00:00:00 EST 1978

OSTI ID:5757953

The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October 1977-September 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DOE cost goals can only be met by the growth of large diameter, large mass crystals.

• Research Organization: Kayex Corp., Rochester, NY (USA)
• OSTI ID: 5757953
• Report Number(s): N-79-16369
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON
CRYSTAL GROWTH
SILICON SOLAR CELLS
FABRICATION
CZOCHRALSKI METHOD
EFFICIENCY
MONOCRYSTALS
CRYSTAL GROWTH METHODS
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture