Interaction of VUV-FEL radiation with B4C and SiC at 32nm wavelength

Technical Report · Wed Mar 01 23:00:00 EST 2006

DOI:https://doi.org/10.2172/893976· OSTI ID:893976

Hau-Riege, S; London, R; Bionta, R

The output fluence and pulse duration of XFELs such as LCLS and TESLA will pose significant challenges to the optical components which may be damaged by the XFEL beam [1]. It is expected that low-atomic-number materials such as SiC, B{sub 4}C, and diamond exhibit weak absorption and therefore are damaged least. It has been suggested that the fundamental damage mechanism that determines the fluence damage threshold for single-shot exposures is thermal melting of the materials [2]. For multiple-shot exposures, the damage threshold is potentially lower than the melt threshold due to fatigue effects associated with mechanical stresses during to thermal cycling [3].

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 893976
• Report Number(s): UCRL-TR-219603
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
DIAMONDS
MELTING
RADIATIONS
STRESSES
THERMAL CYCLING
WAVELENGTHS