Analysis of diamond and diamondlike thin films using neutron depth profiling
Much progress in recent years has been made on the development of the technology for the production of thin films of diamond and diamond-like materials. Because of its physical properties, much interest has been shown in diamond as a material to construct semiconductor devices. Among the most important of these physical properties are the highest known thermal conductivity (20 W/cm {times} K), wide energy gap (5.5 eV), and high breakdown fields (107 V/cm). Natural type-II diamond crystals are known to be semiconductors where boron is the dominant acceptor with an activation energy of {approximately}0.3 eV. Recent efforts have concentrated on introducing the boron during the synthesis of thin diamond and diamond-like films. Fujimori et al. have shown that boron doping can be accomplished during the gas-phase growth by adding B{sub 2}H{sub 6} to the gas mixture. Knowing both the concentration and distribution of dopants in the diamond is important both for understanding the synthesis process and the correlation with the physical properties of the material. Neutron depth profiling is a procedure that allows the measurement of the concentration and distribution of the dopant (boron) in chemical vapor deposition diamonds.
- OSTI ID:
- 89078
- Report Number(s):
- CONF-941102-; ISSN 0003-018X; TRN: 95:004215-0148
- Journal Information:
- Transactions of the American Nuclear Society, Vol. 71; Conference: Winter meeting of the American Nuclear Society (ANS), Washington, DC (United States), 13-18 Nov 1994; Other Information: PBD: 1994
- Country of Publication:
- United States
- Language:
- English
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