Semi-insulating 6H-SiC epitaxial films
- Mississippi State Univ., MS (United States). Dept. of Electrical and Computer Engineering
- Army Research Lab., Adelphi, MD (United States)
Silicon carbide is a promising wide-bandgap electronic material. Historically, SiC materials research has concentrated on improving crystallography, material purity, and shallow-level impurity doping technology. Future SiC device technology requirements in the areas of high power microwave components, photoconductive detectors and switches, and power semiconductors require the development of currently unavailable high-resistivity SiC material. However, a recently reported chemical vapor deposition (CVD) growth technique known as site-competition epitaxy is capable of growing 6H-SiC epitaxial layers with much reduced shallow background densities ({approximately} 3 {times} 10{sup 15} cm{sup {minus}3}). The authors have now shown with Deep Level Transient Spectroscopy (DLTS) that dopant control by site-competition epitaxy extends to a boron-related deep-level defect known as the D-center (E{sub v} + 0.58 eV). They describe a method for using the precise dopant control offered by site-competition epitaxy and the dopant profiling capability of conventional C-V and DLTS measurement techniques to grow and characterize high-purity semi-insulating epitaxial films by compensating shallow impurity levels with the boron-related D-center.
- OSTI ID:
- 51766
- Report Number(s):
- CONF-940604-; ISBN 0-7803-2006-9; TRN: IM9524%%234
- Resource Relation:
- Conference: 1994 Institute of Electrical and Electronic Engineers (IEEE) international conference on plasma science, Santa Fe, NM (United States), 6-8 Jun 1994; Other Information: PBD: 1994; Related Information: Is Part Of IEEE conference record -- Abstracts; PB: 252 p.
- Country of Publication:
- United States
- Language:
- English
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