Direct evidence of N aggregation and diffusion in Au+ irradiated GaN
Journal Article
·
· Applied Physics Letters, 89(2):021903-1-3
A surface amorphized layer and a buried disordered structure were created in gallium nitride (GaN) irradiated using 1.0 MeV Au+ ions to fluences of 25 and 70 Au+/nm2 at room temperature. Bubbles of N2 gas within both the amorphized and disordered GaN are formed. A gradient profile with a lower N concentration in the amorphized region is observed, which provides direct evidence of N loss by diffusion in the Au+ irradiated GaN. These results are important to understanding the amorphization processes in GaN and may have significant implications for the design and fabrication of GaN-based devices.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 889049
- Report Number(s):
- PNNL-SA-48878; APPLAB; 3448; KC0201020; TRN: US200619%%191
- Journal Information:
- Applied Physics Letters, 89(2):021903-1-3, Vol. 89, Issue 2; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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