Direct evidence of N aggregation and diffusion in Au{sup +} irradiated GaN
- Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
A surface amorphized layer and a buried disordered structure were created in gallium nitride (GaN) irradiated using 1.0 MeV Au{sup +} ions to fluences of 25 and 70 Au{sup +}/nm{sup 2} at room temperature. Bubbles of N{sub 2} gas within both the amorphized and disordered GaN are formed. A gradient profile with a lower N concentration in the amorphized region is observed, which provides direct evidence of N loss by diffusion in the Au{sup +} irradiated GaN. These results are important to understanding the amorphization processes in GaN and may have significant implications for the design and fabrication of GaN-based devices.
- OSTI ID:
- 20860546
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 2; Other Information: DOI: 10.1063/1.2219418; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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