Amorphization Processes in Au Ion Irradiated GaN at 150 - 300 K
Epitaxial single-crystal gallium nitride (GaN) films on sapphire were irradiated at temperatures between 150 and 300 K using 1.0 MeV Au ions over a range of fluences. The accumulation of disorder on the Ga sublattice has been investigated based on 2.0 MeV He+ RBS along the <0001>-axial channeling direction. In general, the degree of disorder in the irradiated GaN increases at low doses and saturates at intermediate doses; at higher doses, a rapid amorphization process occurs as a result of the ingrowth of surface defects. Results from this study indicate that there may be a dynamic recovery stage on the Ga sublattice in GaN between 250 and 300 K. High-resolution TEM studies show that the microstructure in the disorder saturation stage contains a dense network of planar defects (basal-plane dislocation loops and stacking faults), while the more highly disordered regime includes amorphous domains and small crystalline zones that are randomly oriented.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US), Environmental Molecular Sciences Laboratory (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15007824
- Report Number(s):
- PNNL-SA-39367; 3448; KC0201020; TRN: US0402480
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Vol. 218; Other Information: PBD: 1 Jun 2004
- Country of Publication:
- United States
- Language:
- English
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