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Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Journal Article · · IEEE Transactions on Nuclear Science
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  1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. North Carolina State Univ., Raleigh, NC (United States). Dept. of Electrical and Computer Engineering
  4. North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics
+ Show Author Affiliations
High-energy ion-irradiated 3.3-nm oxynitride film and 2.2-nm SiO2-film MOS capacitors show premature breakdown during subsequent electrical stress. This degradation in breakdown increases with increasing ion linear energy transfer (LET), increasing ion fluence, and decreasing oxide thickness. We explain the reliability degradation due to high-energy ion-induced latent defects by a simple percolation model of conduction through SiO2 layers with irradiation and/or electrical stress-induced defects. Monitoring the gate-leakage current reveals the presence of latent defects in the dielectric films. Finally, our results may be significant to future single-event effects and single-event gate rupture tests for MOS devices and ICs with ultrathin gate oxides.
Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
888998
Report Number(s):
SAND2003--0136J
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 49; ISSN 0018-9499
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
IRRADIATION
RELIABILITY