Nanometer-scale electrical characterization of stressed ultrathin SiO{sub 2} films using conducting atomic force microscopy
A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin ({lt}6 nm) SiO{sub 2} films on a nanometer scale (areas of {approximately}100 nm{sup 2}). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204593
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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