Thickness evaluation of ultrathin gate oxides at the limit
Journal Article
·
· AIP Conference Proceedings
- Materials Evaluation Center, Korea Research Institute of Standards and Science, Yusoung P.O. 102, Taejon 305-606 (Korea, Republic of)
The thickness of ultrathin gate oxides thinner than 10 nm were analyzed with Medium Energy Ion Scattering Spectroscopy (MEIS), High Resolution Transmission Electron Microscopy (HRTEM) and Spectroscopic Ellipsometry (SE). MEIS showed the presence of a 1.3 nm transition interlayer between SiO{sub 2} and Si substrate. For an ultrathin gate oxide, the thickness values estimated with MEIS, TEM, and SE were 6.2 nm, 7.3 nm and 6.7 nm, respectively. The discrepancies and the complimentary features were discussed.
- OSTI ID:
- 21202303
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 449; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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