Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors.
Journal Article
·
· Proposed for publication in the Conference proceedings
from the 31st International Symposium for Testing and
Failure Analysis.
OSTI ID:885112
Abstract Not Provided
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 885112
- Report Number(s):
- SAND2005-4954J
- Journal Information:
- Proposed for publication in the Conference proceedings from the 31st International Symposium for Testing and Failure Analysis., Journal Name: Proposed for publication in the Conference proceedings from the 31st International Symposium for Testing and Failure Analysis.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Transmission electron microscopy and scanning capacitance microscopy analysis of dislocation-induced leakages in n-channel I/O transistors.
Quantitative analysis of microelectromechanical-based field effect transistors using scanning capacitance microscopy and device simulations.
Liquid Scanning / Transmission Electron Microscopy.
Conference
·
Thu Sep 01 04:00:00 UTC 2005
·
OSTI ID:884701
Quantitative analysis of microelectromechanical-based field effect transistors using scanning capacitance microscopy and device simulations.
Journal Article
·
Wed Feb 01 04:00:00 UTC 2006
· Proposed for publication in Applied Physics Letters.
·
OSTI ID:884702
Liquid Scanning / Transmission Electron Microscopy.
Conference
·
Sun Sep 01 04:00:00 UTC 2013
·
OSTI ID:1684725