Quantitative analysis of microelectromechanical-based field effect transistors using scanning capacitance microscopy and device simulations.
Journal Article
·
· Proposed for publication in Applied Physics Letters.
OSTI ID:884702
No abstract prepared.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 884702
- Report Number(s):
- SAND2006-0685J
- Journal Information:
- Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Transmission electron microscopy and scanning capacitance microscopy analysis of dislocation-induced leakages in n-channel I/O transistors.
Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors.
Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy
Conference
·
Thu Sep 01 00:00:00 EDT 2005
·
OSTI ID:884701
Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors.
Journal Article
·
Mon Aug 01 00:00:00 EDT 2005
· Proposed for publication in the Conference proceedings
from the 31st International Symposium for Testing and
Failure Analysis.
·
OSTI ID:885112
Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy
Journal Article
·
Thu Dec 31 23:00:00 EST 1998
· Applied Physics Letters
·
OSTI ID:7028