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Transmission electron microscopy and scanning capacitance microscopy analysis of dislocation-induced leakages in n-channel I/O transistors.

Conference ·
OSTI ID:884701
; ; ; ; ;
No abstract prepared.
Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000;
OSTI ID:
884701
Report Number(s):
SAND2005-5741C
Conference Information:
Proposed for presentation at the 31st International Symposium for Testing and Failure Analysis.
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
DISLOCATIONS
LEAKAGE CURRENT
MICROSCOPY
TESTING
TRANSISTORS
TRANSMISSION ELECTRON MICROSCOPY