Transmission electron microscopy and scanning capacitance microscopy analysis of dislocation-induced leakages in n-channel I/O transistors.
Conference
·
OSTI ID:884701
No abstract prepared.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 884701
- Report Number(s):
- SAND2005-5741C; TRN: US200616%%7
- Resource Relation:
- Conference: Proposed for presentation at the 31st International Symposium for Testing and Failure Analysis.
- Country of Publication:
- United States
- Language:
- English
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