The growth of epitaxial uranium oxide observed by micro-Raman spectroscopy
Raman spectroscopy can be performed with micrometer resolution and can thus be used to determine the dependence of oxide thickness on the substrate's grain structure or local impurity inclusions. The Raman signal amplitude emitted from an epitaxial uranium oxide layer as a function of oxide thickness has been modeled for light of 632.8 nm wavelength incident on the oxide and reflected from the uranium substrate using the optical properties determined by spectrophotometry. The model shows that the Raman signal increases with oxide thickness and saturates at about 150 nm thickness. The model was compared with the measured Raman signal amplitude of an epitaxial uranium oxide layer growing in air with a known time dependence of oxide growth.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 883532
- Report Number(s):
- UCRL-CONF-217799; TRN: US200615%%101
- Resource Relation:
- Journal Volume: 893; Conference: Presented at: Materials Research Society, Boston, MA, United States, Nov 28 - Dec 02, 2005
- Country of Publication:
- United States
- Language:
- English
Raman Microprobe Spectroscopy of Uranium Dioxide Single Crystals and Ion Implanted Polycrystals
|
journal | December 1990 |
Characterisation of uranium oxides by micro-Raman spectroscopy
|
journal | January 1987 |
Raman spectra of stoichiometric and hyperstoichiometric uranium dioxide
|
journal | September 2003 |
Characterization of Uranium Oxides Using in Situ Micro-Raman Spectroscopy
|
journal | September 2000 |
The initial kinetics of uranium hydride formation studied by a hot-stage microscope technique
|
journal | November 1984 |
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