Epitaxial growth and characterization of stoichiometric LiNbO{sub 3} films prepared by the sol-gel method
- Department of Applied Chemistry, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501 (Japan)
After stoichiometric LiNbO{sub 3} thick films were deposited on z-cut LiNbO{sub 3} substrates using the sol-gel method from a precursor solution containing various polyvinyl alcohol (PVA) concentrations, their characteristics were investigated. The film thickness increased linearly with the increase in PVA and precursor concentrations. The orientation relationships between films and substrates were determined by x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, and the results showed that (006) oriented LiNbO{sub 3} epitaxial layers with parallel epitaxial relationships could be grown on a z-cut LiNbO{sub 3} substrate. The refractive indexes of the films were n{sub 0}=2.28{+-}0.02 and n{sub e}=2.19{+-}0.02 at a wavelength of 632.8 nm, and their transmission loss was 0.50{+-}0.04 dB/cm.
- OSTI ID:
- 20658105
- Journal Information:
- Journal of Applied Physics, Vol. 96, Issue 11; Other Information: DOI: 10.1063/1.1789634; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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