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Title: Diamond-Silicon Carbide Composite And Method For Preparation Thereof

Abstract

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Inventors:
 [1];  [1]
  1. Los Alamos, NM
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
OSTI Identifier:
880042
Patent Number(s):
US 6939506
Application Number:
10/448672
Assignee:
The Regents of the University of California (Los Alamos, NM)
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Qian, Jiang, and Zhao, Yusheng. Diamond-Silicon Carbide Composite And Method For Preparation Thereof. United States: N. p., 2005. Web.
Qian, Jiang, & Zhao, Yusheng. Diamond-Silicon Carbide Composite And Method For Preparation Thereof. United States.
Qian, Jiang, and Zhao, Yusheng. 2005. "Diamond-Silicon Carbide Composite And Method For Preparation Thereof". United States. https://www.osti.gov/servlets/purl/880042.
@article{osti_880042,
title = {Diamond-Silicon Carbide Composite And Method For Preparation Thereof},
author = {Qian, Jiang and Zhao, Yusheng},
abstractNote = {Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.},
doi = {},
url = {https://www.osti.gov/biblio/880042}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {9}
}

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Superhard materials based on nanostructured high-melting point compounds: achievements and perspectives
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