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Title: Diamond-silicon carbide composite

Abstract

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m 1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Inventors:
;
Publication Date:
Research Org.:
The Regents of the University of California, Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175790
Patent Number(s):
7,060,641
Application Number:
11/110,252
Assignee:
The Regents of the University of California (Los Alamos, NM) OSTI
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Qian, Jiang, and Zhao, Yusheng. Diamond-silicon carbide composite. United States: N. p., 2006. Web.
Qian, Jiang, & Zhao, Yusheng. Diamond-silicon carbide composite. United States.
Qian, Jiang, and Zhao, Yusheng. Tue . "Diamond-silicon carbide composite". United States. https://www.osti.gov/servlets/purl/1175790.
@article{osti_1175790,
title = {Diamond-silicon carbide composite},
author = {Qian, Jiang and Zhao, Yusheng},
abstractNote = {Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 13 00:00:00 EDT 2006},
month = {Tue Jun 13 00:00:00 EDT 2006}
}

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