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Title: Diamond-silicon carbide composite and method

Abstract

Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

Inventors:
 [1]
  1. Los Alamos, NM
Publication Date:
Research Org.:
Los Alamos National Security, LLC (Los Alamos, NM)
Sponsoring Org.:
USDOE
OSTI Identifier:
1019105
Patent Number(s):
7,959,841
Application Number:
US Patent Application 11/444,649
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) ALO
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhao, Yusheng. Diamond-silicon carbide composite and method. United States: N. p., 2011. Web.
Zhao, Yusheng. Diamond-silicon carbide composite and method. United States.
Zhao, Yusheng. Tue . "Diamond-silicon carbide composite and method". United States. https://www.osti.gov/servlets/purl/1019105.
@article{osti_1019105,
title = {Diamond-silicon carbide composite and method},
author = {Zhao, Yusheng},
abstractNote = {Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 14 00:00:00 EDT 2011},
month = {Tue Jun 14 00:00:00 EDT 2011}
}

Patent:

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