Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system

Patent · Sat Jan 01 04:00:00 EST 2000

OSTI ID:875174

Baldasaro, Paul F. ^[1]; Brown, Edward J. ^[1]; Charache, Greg W. ^[1]; DePoy, David M. ^[1]

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1. Clifton Park, NY

A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).

• Research Organization: Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC12-76SN00052
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): H001856
• Application Number: 08/740517
• OSTI ID: 875174
• Country of Publication: United States
• Language: English

Related Subjects

/136/438/
absorption
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calculated
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decrease
device
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energy
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method
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semiconductor
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substrate
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thermophotovoltaic
thermophotovoltaic device
thermophotovoltaic energy
thickness
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top surface
wafer
wafer substrate