Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:875174

Baldasaro, Paul F. ^[1]; Brown, Edward J. ^[1]; Charache, Greg W. ^[1]; DePoy, David M. ^[1]

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1. Clifton Park, NY

A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).

• Research Organization: Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC12-76SN00052
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): H001856
• Application Number: 08/740517
• OSTI ID: 875174
• Resource Relation: Patent File Date: 1996 Oct 30
• Country of Publication: United States
• Language: English

Related Subjects

lapped
substrate
enhanced
backsurface
reflectivity
energy
conversion
method
fabricating
thermophotovoltaic
cell
including
semiconductor
thickness
beta
calculated
decrease
free
carrier
absorption
heavily
doped
top
surface
provided
device
metallized
grid
optionally
antireflective
overcoating
bottom
wafer
highly
reflecting
coating
comprise
metal
combined
dielectric
wafer substrate
thermophotovoltaic device
cell including
heavily doped
semiconductor wafer
top surface
photovoltaic device
energy conversion
metal coating
bottom surface
thermophotovoltaic energy
conversion cell
metallized grid
reflecting coating
photovoltaic energy
statutory invention registration
/136/438/